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Semiconductor material and method for enhancing solubility of a dopant therein

United States Patent

September 9, 2003
View the Complete Patent at the US Patent & Trademark Office
Lawrence Livermore National Laboratory - Visit the Industrial Partnerships Office Website
A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at C.; and for indium, a 1% tensile strain at C., corresponds to an enhancement of the solubility by 200%.
Sadigh; Babak (Oakland, CA), Lenosky; Thomas J. (Pleasanton, CA), Rubia; Tomas Diaz de la (Danville, CA), Giles; Martin (Hillsborough, OR), Caturla; Maria-Jose (Livermore, CA), Ozolins; Vidvuds (Pleasanton, CA), Asta; Mark (Evanston, IL), Theiss; Silva (St. Paul, MN), Foad; Majeed (Santa Clara, CA), Quong; Andrew (Livermore, CA)
The Regents of the University of California (Oakland, CA)
10/ 246,890
September 18, 2002
The United States Government has rights in this invention pursuant to Contract No. W-7405-ENG-48 between the United States Department of Energy and the University of California for the operation of Lawrence Livermore National Laboratory.