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Gamma-ray detector employing scintillators coupled to semiconductor drift photodetectors

United States Patent

February 18, 2003
View the Complete Patent at the US Patent & Trademark Office
Radiation detectors according to one embodiment of the invention are implemented using scintillators combined with a semiconductor drift photodetectors wherein the components are specifically constructed in terms of their geometry, dimensions, and arrangement so that the scintillator decay time and drift time in the photodetector pairs are matched in order to achieve a greater signal-to-noise ratio. The detectors may include electronics for amplification of electrical signals produced by the silicon drift photodetector, the amplification having a shaping time optimized with respect to the decay time of the scintillator and time spread of the signal in the silicon drift photodetector to substantially maximize the ratio of the signal to the electronic noise.
Iwanczyk; Jan S. (Los Angeles, CA), Patt; Bradley E. (Sherman Oaks, CA)
Photon Imaging, Inc. (Northridge, CA)
09/ 437,903
November 9, 1999
GOVERNMENT LICENSE RIGHTS This invention was made with government support under Small Business Invention Research Program (grant no. DEFG03-97ER82451) awarded by the Department of Energy. The government has certain rights in this invention.