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Gold-based electrical interconnections for microelectronic devices

United States Patent

December 31, 2002
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A method of making an electrical interconnection from a microelectronic device to a package, comprising ball or wedge compression bonding a gold-based conductor directly to a silicon surface, such as a polysilicon bonding pad in a MEMS or IMEMS device, without using layers of aluminum or titanium disposed in-between the conductor and the silicon surface. After compression bonding, optional heating of the bond above 363 C. allows formation of a liquid gold-silicon eutectic phase containing approximately 3% (by weight) silicon, which significantly improves the bond strength by reforming and enhancing the initial compression bond. The same process can be used for improving the bond strength of Au--Ge bonds by forming a liquid Au-12Ge eutectic phase.
Peterson; Kenneth A. (Albuquerque, NM), Garrett; Stephen E. (Albuquerque, NM), Reber; Cathleen A. (Corrales, NM), Watson; Robert D. (Tijeras, NM)
Sandia Corporation (Albuquerque, NM)
09/ 922,518
August 2, 2001
FEDERALLY SPONSORED RESEARCH The United States Government has rights in this invention pursuant to Department of Energy Contract No. DE-AC04-94AL85000 with Sandia Corporation.