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Plasma formed ion beam projection lithography system

United States Patent

November 26, 2002
View the Complete Patent at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
A plasma-formed ion-beam projection lithography (IPL) system eliminates the acceleration stage between the ion source and stencil mask of a conventional IPL system. Instead a much thicker mask is used as a beam forming or extraction electrode, positioned next to the plasma in the ion source. Thus the entire beam forming electrode or mask is illuminated uniformly with the source plasma. The extracted beam passes through an acceleration and reduction stage onto the resist coated wafer. Low energy ions, about 30 eV, pass through the mask, minimizing heating, scattering, and sputtering.
Leung; Ka-Ngo (Hercules, CA), Lee; Yung-Hee Yvette (Berkeley, CA), Ngo; Vinh (San Jose, CA), Zahir; Nastaran (Greenbrae, CA)
The Regents of the University of California (Oakland, CA)
09/ 289,333
April 9, 1999
GOVERNMENT RIGHTS The United States Government has rights in this invention pursuant to Contract No. DE-AC03-76SF00098 between the United States Department of Energy and the University of California.