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Structural tuning of residual conductivity in highly mismatched III-V layers

United States Patent

June 18, 2002
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A new process to control the electrical conductivity of gallium nitride layers grown on a sapphire substrate has been developed. This process is based on initially coating the sapphire substrate with a thin layer of aluminum nitride, then depositing the gallium nitride thereon. This process allows one to controllably produce gallium nitride layers with resistivity varying over as much as 10 orders of magnitude, without requiring the introduction and activation of suitable dopants.
Han; Jung (Albuquerque, NM), Figiel; Jeffrey J. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
09/ 416,385
October 12, 1999
This invention was made with Government support under Contract DE-AC04-94DP85000 awarded by the U.S. Department of Energy. The Government has certain rights in the invention.