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Method of dehydroxylating a hydroxylated material and method of making a mesoporous film

United States Patent

May 7, 2002
View the Complete Patent at the US Patent & Trademark Office
Pacific Northwest National Laboratory - Visit the Technology Commercialization Program Website
The present invention is a method of dehydroxylating a silica surface that is hydroxylated having the steps of exposing the silica surface separately to a silicon organic compound and a dehydroxylating gas. Exposure to the silicon organic compound can be in liquid, gas or solution phase, and exposure to a dehydroxylating gas is typically at elevated temperatures. In one embodiment, the improvement of the dehydroxylation procedure is the repetition of the soaking and dehydroxylating gas exposure. In another embodiment, the improvement is the use of an inert gas that is substantially free of hydrogen. In yet another embodiment, the present invention is the combination of the two-step dehydroxylation method with a surfactant templating method of making a mesoporous film.
Domansky; Karel (Richland, WA), Fryxell; Glen E. (Kennewick, WA), Liu; Jun (West Richland, WA), Kohler; Nathan J. (Richland, WA), Baskaran; Suresh (Kennewick, WA)
Battelle Memorial Institute (Richland, WA)
09/ 222,569
December 28, 1998
This invention was made with Government support under Contract DE-AC0676RLO1830 awarded by the U.S. Department of Energy. The Government has certain rights in the invention.