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Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication

United States Patent

April 30, 2002
View the Complete Patent at the US Patent & Trademark Office
Lawrence Livermore National Laboratory - Visit the Industrial Partnerships Office Website
Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).
Weihs; Timothy P. (Baltimore, MD), Barbee, Jr.; Troy W. (Palto Alto, CA)
The Regents of the University of California (Oakland, CA)
09/ 105,585
June 26, 1998
The United States Government has rights in this invention pursuant to Contract No. W-7405-ENG-48 between the United States Department of Energy and the Regents of the University of California for the operation of Lawrence Livermore National Laboratory.