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Method for forming a barrier layer

United States Patent

January 15, 2002
View the Complete Patent at the US Patent & Trademark Office
Lawrence Livermore National Laboratory - Visit the Industrial Partnerships Office Website
Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).
Weihs; Timothy P. (Baltimore, MD), Barbee, Jr.; Troy W. (Palo Alto, CA)
The Regents of the University of California (Oakland, CA)
09/ 567,513
May 9, 2000
The United States Government has rights in this invention pursuant to Contract No. W-7405-ENG48 between the United States Department of Energy and the Regents of the University of California for the operation of Lawrence Livermore National Laboratory.