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Mesoporous silica film from a solution containing a surfactant and methods of making same

United States Patent

December 11, 2001
View the Complete Patent at the US Patent & Trademark Office
Pacific Northwest National Laboratory - Visit the Technology Commercialization Program Website
The present invention is a mesoporous silica film having a low dielectric constant and method of making having the steps of combining a surfactant in a silica precursor solution, spin-coating a film from this solution mixture, forming a partially hydroxylated mesoporous film, and dehydroxylating the hydroxylated film to obtain the mesoporous film. It is advantageous that the small polyoxyethylene ether surfactants used in spin-coated films as described in the present invention will result in fine pores smaller on average than about 20 nm. The resulting mesoporous film has a dielectric constant less than 3, which is stable in moist air with a specific humidity. The present invention provides a method for superior control of film thickness and thickness uniformity over a coated wafer, and films with low dielectric constant.
Liu; Jun (West Richland, WA), Domansky; Karel (Cambridge, MA), Li; Xiaohong (Richland, WA), Fryxell; Glen E. (Kennewick, WA), Baskaran; Suresh (Kennewick, WA), Kohler; Nathan J. (Richland, WA), Thevuthasan; Suntharampillai (Kennewick, WA), Coyle; Christopher A. (Richland, WA), Birnbaum; Jerome C. (Richland, WA)
Battelle Memorial Institute (Richland, WA)
09/ 413,062
October 4, 1999
This invention was made with Government support under Contract DE-AC0676RLO1830 awarded by the U.S. Department of Energy. The Government has certain rights in the invention.