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Low pressure stagnation flow reactor with a flow barrier

United States Patent

July 31, 2001
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A flow barrier disposed at the periphery of a workpiece for achieving uniform reaction across the surface of the workpiece, such as a semiconductor wafer, in a stagnation flow reactor operating under the conditions of a low pressure or low flow rate. The flow barrier is preferably in the shape of annulus and can include within the annular structure passages or flow channels for directing a secondary flow of gas substantially at the surface of a semiconductor workpiece. The flow barrier can be constructed of any material which is chemically inert to reactive gases flowing over the surface of the semiconductor workpiece.
Vosen; Steven R. (Berkeley, CA)
09/ 314,846
May 19, 1999
The United States Government has rights in this invention pursuant to Contract No. DE-AC04-94AL85000 between the United States Department of Energy and Sandia Corporation for the operation of Sandia National Laboratories.