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Sealable stagnation flow geometries for the uniform deposition of materials and heat

United States Patent

June 5, 2001
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
The present invention employs a constrained stagnation flow geometry apparatus to achieve the uniform deposition of materials or heat. The present invention maximizes uniform fluxes of reactant gases to flat surfaces while minimizing the use of reagents and finite dimension edge effects. This results, among other things, in large area continuous films that are uniform in thickness, composition and structure which is important in chemical vapor deposition processes such as would be used for the fabrication of semiconductors.
McCarty; Kevin F. (Livermore, CA), Kee; Robert J. (Livermore, CA), Lutz; Andrew E. (Alamo, CA), Meeks; Ellen (Livermore, CA)
Sandia Corporation (Livermore, CA)
08/ 302,155
September 8, 1994
STATEMENT OF GOVERNMENT INTEREST The government has rights in this invention pursuant to contract no. DE-AC04-94AL8500 between the U.S. Department of Energy and Sandia Corporation.