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Process for fabricating device structures for real-time process control of silicon doping

United States Patent

April 24, 2001
View the Complete Patent at the US Patent & Trademark Office
Lawrence Livermore National Laboratory - Visit the Industrial Partnerships Office Website
Silicon device structures designed to allow measurement of important doping process parameters immediately after the doping step has occurred. The test structures are processed through contact formation using standard semiconductor fabrication techniques. After the contacts have been formed, the structures are covered by an oxide layer and an aluminum layer. The aluminum layer is then patterned to expose the contact pads and selected regions of the silicon to be doped. Doping is then performed, and the whole structure is annealed with a pulsed excimer laser. But laser annealing, unlike standard annealing techniques, does not effect the aluminum contacts because the laser light is reflected by the aluminum. Once the annealing process is complete, the structures can be probed, using standard techniques, to ascertain data about the doping step. Analysis of the data can be used to determine probable yield reductions due to improper execution of the doping step and thus provide real-time feedback during integrated circuit fabrication.
Weiner; Kurt H. (San Jose, CA)
The Regents of the University of Claifornia (Oakland, CA)
08/ 548,928
October 26, 1995
The United States Government has rights in this invention pursuant to Contract No. W-7405-ENG-48 between the United States Department of Energy and the University of California for the operation of Lawrence Livermore National Laboratory.