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Photovoltaic devices comprising zinc stannate buffer layer and method for making

United States Patent

January 2, 2001
View the Complete Patent at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.
Wu; Xuanzhi (Golden, CO), Sheldon; Peter (Lakewood, CO), Coutts; Timothy J. (Lakewood, CO)
Midwest Research Institute (Kansas City, MO)
09/ 149,430
September 8, 1998
CONTRACTUAL ORIGIN OF THE INVENTION The United States Government has rights in this invention under Contract No. DE-AC36-83CH10093 between the U.S. Department of Energy and the National Renewable Energy Laboratory, a Division of Midwest Research Institute.