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Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom

United States Patent

September 5, 2000
View the Complete Patent at the US Patent & Trademark Office
Oak Ridge National Laboratory - Visit the Partnerships Directorate Website
The present invention provides methods and biaxially textured articles having a deformed epitaxial layer formed therefrom for use with high temperature superconductors, photovoltaic, ferroelectric, or optical devices. A buffer layer is epitaxially deposited onto biaxially-textured substrates and then mechanically deformed. The deformation process minimizes or eliminates grooves, or other irregularities, formed on the buffer layer while maintaining the biaxial texture of the buffer layer. Advantageously, the biaxial texture of the buffer layer is not altered during subsequent heat treatments of the deformed buffer. The present invention provides mechanical densification procedures which can be incorporated into the processing of superconducting films through the powder deposit or precursor approaches without incurring unfavorable high-angle grain boundaries.
Lee; Dominic F. (Knoxville, TN), Kroeger; Donald M. (Knoxville, TN), Goyal; Amit (Knoxville, TN)
UT-Battelle, LLC (Oakridge, TN)
09/ 163,994
September 30, 1998
This invention was made with government support under contract DE-ACO5-96OR22464, awarded by the United States Department of Energy to Lockheed Martin Energy Research Corporation, and the United States Government has certain rights in this invention.