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Method to improve commercial bonded SOI material

United States Patent

July 11, 2000
View the Complete Patent at the US Patent & Trademark Office
A method of improving the bonding characteristics of a previously bonded silicon on insulator (SOI) structure is provided. The improvement in the bonding characteristics is achieved in the present invention by, optionally, forming an oxide cap layer on the silicon surface of the bonded SOI structure and then annealing either the uncapped or oxide capped structure in a slightly oxidizing ambient at temperatures greater than C. Also provided herein is a method for detecting the bonding characteristics of previously bonded SOI structures. According to this aspect of the present invention, a pico-second laser pulse technique is employed to determine the bonding imperfections of previously bonded SOI structures.
Maris; Humphrey John (Barrington, RI), Sadana; Devendra Kumar (Pleasantville, NY)
International Business Machines Corporation (Armonk, NY)
09/ 031,289
February 26, 1998
DESCRIPTION This invention was made with government support under DE-FG02-86ER45267 awarded by the U.S. Department of Energy. The U.S. government thus has certain rights in this invention.