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Chemical vapor deposition of fluorine-doped zinc oxide

United States Patent

June 6, 2000
View the Complete Patent at the US Patent & Trademark Office
Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.
Gordon; Roy G. (Cambridge, MA), Kramer; Keith (Avon Lake, OH), Liang; Haifan (Santa Clara, CA)
President and Fellows of Harvard College (Cambridge, MA)
09/ 242,093
June 16, 1999
STATEMENT AS TO FEDERALLY SPONSORED RESEARCH The invention was made under a contract with the Department of Energy of the United States Government, DOE Grant Number XAN-4-13318-05.