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Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers

United States Patent

January 4, 2000
View the Complete Patent at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.
Haller; Eugene E. (Berkeley, CA), Brundermann; Erik (Berlin, DE)
The Regents of the University of California (Oakland, CA)
08/ 840,601
April 22, 1997
This invention was developed under contract No. DE-AC03-76SF00098 between the United States Department of Energy and the University of California. The U.S. Government has certain rights in the invention.