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High efficiency photovoltaic device

United States Patent

November 2, 1999
View the Complete Patent at the US Patent & Trademark Office
An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem device comprising stacked N-I-P cells may further include a second amorphous, N doped layer interposed between the microcrystalline, N doped layer and a microcrystalline P doped layer. Photovoltaic devices thus configured manifest improved performance, particularly when configured as tandem devices.
Guha; Subhendu (Troy, MI), Yang; Chi C. (Troy, MI), Xu; Xi Xiang (Findlay, OH)
United Solar Systems Corporation (Troy, MI)
08/ 731,497
October 16, 1996
RIGHTS UNDER GOVERNMENT CONTRACT The government of the United States of America has rights in this invention under subcontract ZAN-4-13318-02 awarded by the Department of Energy.