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Layered CU-based electrode for high-dielectric constant oxide thin film-based devices (ANL-IN-03-013)

<em>Simplified schematic representation of a layered device where 102 is the substrate, 104 is the adhering layer, 106 is the electrical conducting layer, 108 is the barrier layer and 110 is the high dielectric layer.</em>
Simplified schematic representation of a layered device where 102 is the substrate, 104 is the adhering layer, 106 is the electrical conducting layer, 108 is the barrier layer and 110 is the high dielectric layer.