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United States Patent Application

View the Complete Application at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
A device comprises a plurality of fence layers of a semiconductor material and a plurality of alternating layers of quantum dots of a second semiconductor material embedded between and in direct contact with a third semiconductor material disposed in a stack between a p-type and n-type semiconductor material. Each quantum dot of the second semiconductor material and the third semiconductor material form a heterojunction having a type II band alignment. A method for fabricating such a device is also provided.
Forrest, Stephen R. (Ann Arbor, MI), Wei, Guodan (Ann Arbor, MI), Shiu, Kuen-Ting (Ann Arbor, MI)
11/ 869,954
October 10, 2007
UNITED STATES GOVERNMENT RIGHTS [0001] This invention was made with U.S. Government support under a contract awarded by U.S. Department of Energy, National Renewable Energy Laboratory. The government has certain rights in this invention.