Skip to Content
Return to Search

Wide band gap semiconductor templates

United States Patent Application

*** PATENT GRANTED ***
20080197327
7,851,412
A1
View the Complete Application at the US Patent & Trademark Office
Los Alamos National Laboratory - Visit the Technology Transfer Division Website
The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.
Arendt, Paul N. (Los Alamos, NM), Stan, Liliana (Los Alamos, NM), Jia, Quanxi (Los Alamos, NM), DePaula, Raymond F. (Santa Fe, NM), Usov, Igor O. (Los Alamos, NM)
The Regents of the University of California
11/ 707,611
February 15, 2007
STATEMENT OF FEDERAL RIGHTS [0001] The United States government has rights in this invention pursuant to Contract No. DE-AC52-06NA25396 between the United States Department of Energy and Los Alamos National Security, LLC for the operation of Los Alamos National Laboratory.