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ION BEAM MILL ETCH DEPTH MONITORING WITH NANOMETER-SCALE RESOLUTION

United States Patent Application

20180053626
A1
View the Complete Application at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
A method for measuring conductance of a material real-time during etching/milling includes providing a fixture having a socket for receiving the material. The socket is attached to a printed circuit board (PCB) mounted on one side of a plate that has at least one opening for providing ion beam access to the material sample. Conductive probes extend from the other side of the PCB to contact and span a target area of the material. A measurement circuit in electrical communication with the probes measures the voltage produced when a current is applied across the material sample to measure changes in electrical properties of the sample over time.
Cybart, Shane A. (Corona, CA), Dynes, Robert C. (La Jolla, CA)
15/ 681,210
August 18, 2017
GOVERNMENT RIGHTS [0002] This invention was made with government support under Contract No. DEACO2 05CH11231 from the Basic Energy Sciences (BES) program of the U.S. Department of Energy (DOE) and Grant No. FA9550-07-1-0493 from the Air Force Office of Scientific Research (AFOSR). The government has certain rights in the invention.