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United States Patent Application

View the Complete Application at the US Patent & Trademark Office
A memory device includes a semiconductor layer with an in-plane polarization component switchable between a first direction and a second direction. A writing electrode is employed to apply a writing voltage to the semiconductor layer to change the in-plane polarization component between the first direction and the second direction. A reading electrode is employed to apply a reading voltage to the semiconductor layer to measure a tunneling current substantially perpendicular to the polarization direction of the in-plane polarization component. The directions of the reading voltage and the writing voltage are substantially perpendicular to each other. Therefore, the reading process is non-destructive. Thin films (e.g., one unit cell thick) of ferroelectric material can be used in the memory device to increase the miniaturization of the device.
LIU, Junwei (Cambridge, MA), Chang, Kai (Halle/Saale, DE), JI, Shuai-Hua (Beijing, CN), Chen, Xi (Beijing, CN), Fu, Liang (Winchester, MA)
15/ 453,548
March 8, 2017
GOVERNMENT SUPPORT [0002] This invention was made with Government support under Grant No. DE-SC0010526 awarded by the Department of Energy. The Government has certain rights in the invention.