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OPTICALLY SWITCHED GRAPHENE/4H-SiC JUNCTION BIPOLAR TRANSISTOR

United States Patent Application

*** PATENT GRANTED ***
20160315211
9,966,491
A1
View the Complete Application at the US Patent & Trademark Office
A bi-polar device is provided, along with methods of making the same. The bi-polar device can include a semiconductor substrate doped with a first dopant, a semiconductor layer on the first surface of the semiconductor substrate, and a Schottky barrier layer on the semiconductor layer. The method of forming a bi-polar device can include: forming a semiconductor layer on a first surface of a semiconductor substrate, where the semiconductor substrate comprises a first dopant and where the semiconductor layer comprises a second dopant that has an opposite polarity than the first dopant; and forming a Schottky barrier layer on a first portion of the semiconductor layer while leaving a second portion of the semiconductor layer exposed.
Chandrashekhar, MVS (Columbia, SC), Sudarshan, Tangali S. (Columbia, SC), Omar, Sabih U. (West Columbia, SC), Brown, Gabriel (Lexington, SC), Shetu, Shamaita S. (West Columbia, SC)
15/ 049,743
February 22, 2016
GOVERNMENT SUPPORT CLAUSE [0002] This invention was made with government support under ECCS-EPMD Award No. 1309466 awarded by the National Science Foundation, under 12-3834 awarded by the Nuclear Energy University Program, Department of Energy, and under N000141010530 awarded by the Office of Naval Research. The government has certain rights in the invention.