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United States Patent Application

View the Complete Application at the US Patent & Trademark Office
A method for fabricating silicon nanowires. The method includes the steps of: depositing a silicon nitride layer on a silicon on insulator (SOI) starting wafer; patterning the silicon nitride to define at least one silicon microbar; etching the SOI starting wafer to expose the at least one silicon microbar, wherein the at least one microbar is surrounded by a raised perimeter; growing a silicon oxide layer on the raised perimeter of the at least one microbar; and etching a portion of the at least one silicon microbar to produce at least one silicon nanowire adjacent the silicon oxide layer.
Daunais, Thomas (Ann Arbor, MI), Bergstrom, Paul L. (Houghton, MI)
15/ 035,595
November 13, 2014
STATEMENT REGARDING FEDERALLY-SPONSORED RESEARCH OR DEVELOPMENT [0002] This invention was made with government support under DE-SC0005162 awarded by the Department of Energy. The government has certain rights in the invention.