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Ultratough CVD single crystal diamond and three dimensional growth thereof

United States Patent Application

*** PATENT GRANTED ***
20060065187
7,594,968
A1
View the Complete Application at the US Patent & Trademark Office
The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m.sup.1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m.sup.1/2. The invetnion further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.
Hemley, Russell J. (Washington, DC), Mao, Ho-kwang (Washington, DC), Yan, Chih-shiue (Washington, DC)
11/ 222,224
September 9, 2005
STATEMENT OF GOVERNMENT ISSUE [0002] This invention was made with U.S. government support under grant number EAR-0135626 from the National Science Foundation and instrument number DE-FC03-03NA00144 from the U.S. Department of Energy. The U.S. government has certain rights in the invention.