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Hole-blocking TiO2/Silicon Heterojunction for Silicon Photovoltaics

United States Patent Application

View the Complete Application at the US Patent & Trademark Office
A hole-blocking silicon/titanium-oxide heterojunction for silicon photovoltaic devices and methods of forming are disclosed. The electronic device includes at least two electrodes having a current path between the two electrodes. The electronic device also includes a heterojunction formed of a titanium-oxide layer deposited over a Si layer and being disposed in the current path. The heterojunction is configured to function as a hole blocker. The first electrode may be electrically coupled to the Si layer and a second electrode may be electrically coupled to the titanium-oxide layer. The device may also include a PN junction disposed in the Si layer, in the current path. The device may also include an electron-blocking heterojunction on silicon in the current path.
Avasthi, Sushobhan (Princeton, NJ), Sturm, James C. (Princeton, NJ), McClain, William E. (Princeton, NJ), Schwartz, Jeffrey (Princeton, NJ)
The Trustees of Princeton University (Princeton NJ)
14/ 385,347
March 14, 2013
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT [0002] This invention was made with government support under Grant No. DE-EE0005315 awarded by the Department of Energy and Grant No. DMR-0819860 awarded by the National Science Foundation. The government has certain rights in the invention.