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P-Type Amorphous GaNAs Alloy as Low Resistant Ohmic Contact to P-Type Group III-Nitride Semiconductors

United States Patent Application

View the Complete Application at the US Patent & Trademark Office
A new composition of matter is described, amorphous GaN.sub.1-xAs.sub.x:Mg, wherein 0<x<1, and more preferably 0.1<x<0.8, which amorphous material is of low resistivity, and when formed as a thin, heavily doped film may be used as a low resistant p-type ohmic contact layer for a p-type group III-nitride layer in such applications as photovoltaic cells. The layer may be applied either as a conformal film or a patterned layer. In one embodiment, as a lightly doped but thicker layer, the amorphous GaN.sub.1-xAs.sub.x:Mg film can itself be used as an absorber layer in PV applications. Also described herein is a novel, low temperature method for the formation of the heavily doped amorphous GaN.sub.1-xAs.sub.x:Mg compositions of the invention in which the doping is achieved during film formation according to MBE methods.
Yu, Kin Man (Lafayette, CA), Walukiewicz, Wladyslaw (Kensington, CA), Levander, Alejandro X. (Berkeley, CA), Novikov, Sergei V. (Nottingham, GB), Foxon, C. Thomas (Nottingham, GB)
13/ 475,420
May 18, 2012
STATEMENT OF GOVERNMENTAL SUPPORT [0002] The invention described and claimed herein was made in part utilizing funds supplied by the U.S. Department of Energy under Contract No. DE-AC02-05CH1231 between the U.S. Department of Energy and the Regents of the University of California for the management and operation of the Lawrence Berkeley National Laboratory. The government has certain rights in this invention.