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Suspended Thin Film Structures

United States Patent Application

View the Complete Application at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
Disclosed is a method of preparing a support structure suitable for use, e.g., in microscopic studies, comprising a free standing atomically thin film (e.g. graphene) suspended across an opening in the support structure. The method in one aspect comprises the steps of preparing a thin film which is an atomically thin film (e.g., graphene) on a surface of a solid substrate to form a graphene-layered substrate; attaching the graphene layer to a hole-containing support mesh; removing the solid support, thereby transferring the graphene layer from the substrate to the carbonaceous hole-containing layer on the support mesh; and then removing contaminants to obtain said structure. In another aspect, the present method does not involve a transfer, but comprises a lithography and etching process in which the atomically thin layer is applied to a support which is marked with a lithographic pattern and selectively etched, leaving the free standing film.
Regan, William R. (Berkeley, CA), Zettl, Alexander (Kensington, CA), Aleman, Benjamin J. (Berkeley, CA)
13/ 013,645
January 25, 2011
STATEMENT OF GOVERNMENTAL SUPPORT [0004] This invention was made with U.S. Government support under U.S. Department of Energy Contract Number DE-AC02-05CH11231. The Government has certain rights in this invention.