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Mesoporous silica film from a solution containing a surfactant and methods of making same

United States Patent Application

View the Complete Application at the US Patent & Trademark Office
Pacific Northwest National Laboratory - Visit the Technology Commercialization Program Website
The present invention is a mesoporous silica film having a low dielectric constant and method of making having the steps of combining a surfactant in a silica precursor solution, spin-coating a film from this solution mixture, forming a partially hydroxylated mesoporous film, and dehydroxylating the hydroxylated film to obtain the mesoporous film. It is advantageous that the small polyoxyethylene ether surfactants used in spin-coated films as described in the present invention will result in fine pores smaller on average than about 20 nm. The resulting mesoporous film has a dielectric constant less than 3, which is stable in moist air with a specific humidity. The present invention provides a method for superior control of film thickness and thickness uniformity over a coated wafer, and films with low dielectric constant.
Liu, Jun (West Richland, WA), Domansky, Karel (Cambridge, MA), Li, Xiaohong (Richland, WA), Fryxell, Glen E. (Kennewick, WA), Baskaran, Suresh (Kennewick, WA), Kohler, Nathan J. (Richland, WA), Thevuthasan, Suntharampillai (Kennewick, WA), Coyle, Christopher A. (Richland, WA), Birnbaum, Jerome C. (Richland, WA)
09/ 837,885
April 18, 2001
[0002] This invention was made with Government support under Contract DE-AC0676RL01830 awarded by the U.S. Department of Energy. The Government has certain rights in the invention.