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United States Patent Application

View the Complete Application at the US Patent & Trademark Office
A hydrogenated, silicon based semiconductor alloy has a defect density of less than 10.sup.16 cm.sup.-3. The alloy may comprise a hydrogenated silicon alloy or a hydrogenated silicon-germanium alloy. Hydrogen content of the alloy is generally less than 15%, and in some instances less than 11%. The tandem photovoltaic devices which incorporate the alloy exhibit low levels of photo degradation. In some instances, the material is fabricated by a high speed VHF deposition process.
Xu, Xixiang (Rochester Hills, MI), Guha, Subhendu (Bloomfield Hills, MI), Yang, Chi (Troy, MI)
United Solar Ovinic LLC (Auburn Hills MI)
12/ 266,957
November 7, 2008
STATEMENT OF GOVERNMENT INTEREST [0001] This invention was made, at least in part, under U.S. Government, Department of Energy, Contact No. DE-FC36-07G017053. The Government may have rights in this invention.