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Nano Particles – Supercritical Fluid Process

Idaho National Laboratory

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Technology Marketing Summary

Scientists at Idaho National Laboratory have invented a new method of producing quantum particles of varying dimensions by employing supercritical fluid process. The process exposes a single source precursor to a supercritical fluid, such as carbon dioxide, scientists developed a process to form nanoparticles for use in semi-conductor devices.

Description

This process offers a more environmentally-friendly, highly competitive, non-silicon based process to produce quantum particles for use in photo-voltaic devices and other industrial applications.

Benefits

-        Delivers an environmentally-friend technology for production,

-        Lowers energy costs to produce photovoltaic devices, and

-        Reduces significantly overall production costs.

Applications and Industries

Nano particles, supercritical fluid, photovoltaic devices, silicon photovoltaic devices

Patents and Patent Applications
ID Number
Title and Abstract
Primary Lab
Date
Patent 8,003,070
Patent
8,003,070
Methods for forming particles from single source precursors
Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.
Idaho National Laboratory 08/23/2011
Issued
Patent 8,445,388
Patent
8,445,388
Methods of forming semiconductor devices and devices formed using such methods
Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.
Idaho National Laboratory 05/21/2013
Issued
Patent 8,324,414
Patent
8,324,414
Methods of forming single source precursors, methods of forming polymeric single source precursors, and single source precursors and intermediate products formed by such methods
Methods of forming single source precursors (SSPs) include forming intermediate products having the empirical formula 1/2{L.sub.2N(.mu.-X).sub.2M'X.sub.2}.sub.2, and reacting MER with the intermediate products to form SSPs of the formula L.sub.2N(.mu.-ER).sub.2M'(ER).sub.2, wherein L is a Lewis base, M is a Group IA atom, N is a Group IB atom, M' is a Group IIIB atom, each E is a Group VIB atom, each X is a Group VIIA atom or a nitrate group, and each R group is an alkyl, aryl, vinyl, (per)fluoro alkyl, (per)fluoro aryl, silane, or carbamato group. Methods of forming polymeric or copolymeric SSPs include reacting at least one of HE.sup.1R.sup.1E.sup.1H and MER with one or more substances having the empirical formula L.sub.2N(.mu.-ER).sub.2M'(ER).sub.2 or L.sub.2N(.mu.-X).sub.2M'(X).sub.2 to form a polymeric or copolymeric SSP. New SSPs and intermediate products are formed by such methods.
Idaho National Laboratory 12/04/2012
Issued
Patent 8,829,217
Patent
8,829,217
Methods of forming single source precursors, methods of forming polymeric single source precursors, and single source precursors formed by such methods
Methods of forming single source precursors (SSPs) include forming intermediate products having the empirical formula 1/2{L.sub.2N(.mu.-X).sub.2M'X.sub.2}.sub.2, and reacting MER with the intermediate products to form SSPs of the formula L.sub.2N(.mu.-ER).sub.2M'(ER).sub.2, wherein L is a Lewis base, M is a Group IA atom, N is a Group IB atom, M' is a Group IIIB atom, each E is a Group VIB atom, each X is a Group VIIA atom or a nitrate group, and each R group is an alkyl, aryl, vinyl, (per)fluoro alkyl, (per)fluoro aryl, silane, or carbamato group. Methods of forming polymeric or copolymeric SSPs include reacting at least one of HE.sup.1R.sup.1E.sup.1H and MER with one or more substances having the empirical formula L.sub.2N(.mu.-ER).sub.2M'(ER).sub.2 or L.sub.2N(.mu.-X).sub.2M'(X).sub.2 to form a polymeric or copolymeric SSP. New SSPs and intermediate products are formed by such methods.
Idaho National Laboratory 09/09/2014
Issued
Patent 8,951,446
Patent
8,951,446
Hybrid particles and associated methods
Hybrid particles that comprise a coating surrounding a chalcopyrite material, the coating comprising a metal, a semiconductive material, or a polymer; a core comprising a chalcopyrite material and a shell comprising a functionalized chalcopyrite material, the shell enveloping the core; or a reaction product of a chalcopyrite material and at least one of a reagent, heat, and radiation. Methods of forming the hybrid particles are also disclosed.
Idaho National Laboratory 02/10/2015
Issued
Patent 9,371,226
Patent
9,371,226
Methods for forming particles
Single source precursors or pre-copolymers of single source precursors are subjected to microwave radiation to form particles of a I-III-VI.sub.2 material. Such particles may be formed in a wurtzite phase and may be converted to a chalcopyrite phase by, for example, exposure to heat. The particles in the wurtzite phase may have a substantially hexagonal shape that enables stacking into ordered layers. The particles in the wurtzite phase may be mixed with particles in the chalcopyrite phase (i.e., chalcopyrite nanoparticles) that may fill voids within the ordered layers of the particles in the wurtzite phase thus produce films with good coverage. In some embodiments, the methods are used to form layers of semiconductor materials comprising a I-III-VI.sub.2 material. Devices such as, for example, thin-film solar cells may be fabricated using such methods.
Oak Ridge National Laboratory 06/21/2016
Issued
Technology Status
Technology IDDevelopment StageAvailabilityPublishedLast Updated
8,003,070ProductionAvailable08/31/201208/31/2012

Contact INL About This Technology

To: Ryan Bills<Ryan.Bills@inl.gov>