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High Throughput Semiconductor Deposition System

National Renewable Energy Laboratory

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Technology Marketing Summary

III-V films are typically deposited using a Metal-Organic Chemical Vapor Deposition (MOCVD) process, which requires expensive metal-organic precursors with low material utilization rates. MOCVD-deposited multi-junction solar cells are prohibitively expensive for many applications, with costs typically exceeding $100/Watt. An alternative to MOCVD for III-V material growth is Hydride Vapor-Phase Epitaxy (HVPE). HVPE eliminates the need for expensive precursors and has a significantly higher precursor material utilization rate, resulting in drastically reduced cell production costs compared to similar cells deposited by MOCVD. To further improve upon the HVPE process, NREL researchers have developed a novel, low-cost HVPE deposition method for III-V materials utilizing a proprietary HVPE reactor design.

Description

This novel, low-cost HVPE deposition method for III-V materials consists of isolated chambers that enable the movement of the device within the HVPE reactor. In addition, these isolated chambers can prevent the mixing of reactant gases during the deposition process, enabling the growth of sharp, crystallographic interfaces. This novel HVPE method also results in significant savings for III-V GaAs/GaInP tandem solar cells when compared to similar tandems deposited through MOCVD, with a projected production cost of less than $10/Watt.

Benefits
  • Low-cost production of GaAs/GaInP tandem cells at <$10/Watt
  • High material utilization
  • Prevents the mixing of reactant gases
Applications and Industries
  • III-V films
  • Semiconductors
  • HVPE
  • Opto-Electronic Devices
Technology Status
Technology IDDevelopment StageAvailabilityPublishedLast Updated
ROI 12-47PrototypeAvailable03/16/201703/16/2017

Contact NREL About This Technology

To: Bill Hadley<bill.hadley@nrel.gov>