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Direct Growth of Single Crystalline III-V Semiconductors on Amorphous Substrates

Lawrence Berkeley National Laboratory

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Technology Marketing Summary

A Berkeley Lab team of researchers led by Ali Javey has developed a technology for direct growth of single crystalline III-V semiconductors onto any substrate, reducing the cost and processing complexity for materials key to photovoltaic and optoelectronic applications.

Description

A Berkeley Lab team of researchers led by Ali Javey has developed a technology for direct growth of single crystalline III-V semiconductors onto any substrate, reducing the cost and processing complexity for materials key to photovoltaic and optoelectronic applications.

Berkeley Lab’s Templated Liquid Phase (TLP) crystal growth technology is a synthetic approach for growth of high performance, nano- and micro-scale single crystalline compound semiconductors with user-defined geometries on arbitrary substrates. While InP was used as a model growth system in this work, the TLP crystal growth method is one that, from a thermodynamic and kinetic point of view, is expected to be applicable to other technologically important III-V materials.

Unlike the Berkeley Lab technology, alternative methods require closely lattice-matched epitaxial substrates for growth of high quality single-crystal III-V thin films and patterned microstructures. Approaches including epitaxial growth of thin films on single-crystalline substrates followed by selective layer transfer to a desired substrate, and several types of nanowire growth, have yet to show direct growth of single-crystalline semiconductors with user-defined geometries and dimensions on amorphous substrates. The Berkeley Lab technology encompasses these abilities via pre-patterning the group III element followed by subsequent growth with the group V element introduced via the vapor phase, offering major advantages in terms of compatibility with traditional device processing technology, scalability, and processing cost. Additionally, it provides a direct pathway to three-dimensional integration of electronic materials and devices with appreciable levels of complexity.

 
Benefits
  • Less costly and complex than current methods
  • Growth on amorphous substrates
  • Applicable to a range of III-V materials
Applications and Industries
  • High performance solar cells
  • Electronic and optoelectronic devices, e.g., transistors, photodetectors, lasers
Technology Status
Technology IDDevelopment StageAvailabilityPublishedLast Updated
2016-037ProposedAvailable02/01/201702/04/2017

Contact LBL About This Technology

To: Suzanne Storar<ipo@lbl.gov>