Skip to Content
Find More Like This
Return to Search

Fabricating Dielectric Ceramic Films on Copper Foils (IN-09-006)

Unique Processing Method for Fabricating Dense Ceramic Films on Copper Foils Used in Embedded Circuit Boards

Argonne National Laboratory

Contact ANL About This Technology

<p align="center">
	<strong><em>Ceramic film capacitors built on a copper foil being tested on a probe station</em></strong></p>

Ceramic film capacitors built on a copper foil being tested on a probe station

Technology Marketing Summary

Highly specialized electronic devices operate today by virtue of printed circuit boards embedded with dozens of tiny components. The highest-performing, most reliable devices depend on non-conductive oxide films overlaid onto a copper substrate. An Argonne team has devised a unique processing method for fabricating dense ceramic films on copper foils used in these devices.

Description

Scientists at Argonne National Laboratory have devised a method for coating a ceramic film on copper foil. The process begins by applying a layer of a sol-gel composition onto the foil and drying it at temperatures of up to 250 degrees C. Next, the dried layer is fired at temperatures between 300 to 450 degrees C to form a ceramic film from the ceramic precursor. The film is then annealed at temperatures ranging from 600 to 750 degrees C in controlled environment to develop the desirable crystalline structure. Thicker films can be created by repeating the steps. The fabrication process is performed under a flowing stream of specialty gas. This process produces dense and pinhole-free ceramic coatings on copper foils.

The fabrication process can be used to prepare ceramic materials consisting of various compounds including lead, magnesium, barium, zirconium, titanium and other elements. Preferably, the substrate consists of at least 90 percent copper—more preferably at least 95 percent copper—ranging between 0.01 and 1 millimeter in thickness. The copper substrate typically has a surface finish with RMS surface roughness of not more than 10 nm.

Benefits

The fabrication process has the benefit of creating a higher-performing, more reliable embedded circuit board.

Applications and Industries
  • Electronics
Patents and Patent Applications
ID Number
Title and Abstract
Primary Lab
Date
Application 20100302706
Application
20100302706
METHOD FOR FABRICATION OF CERAMIC DIELECTRIC FILMS ON COPPER FOILS
The present invention provides a method for fabricating a ceramic film on a copper foil. The method comprises applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250.degree. C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450.degree. C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750.degree. C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas. In some embodiments an additional layer of the sol-gel composition is applied onto the ceramic film and the drying, pyrolyzing and crystallizing steps are repeated for the additional layer to build up a thicker ceramic layer on the copper foil. The process can be repeated one or more times if desired.
Argonne National Laboratory 05/25/2010
Filed
Technology Status
Technology IDDevelopment StageAvailabilityPublishedLast Updated
IN-09-006PrototypeAvailable01/29/201301/29/2013

Contact ANL About This Technology

To: Elizabeth Jordan<partners@anl.gov>