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Process for making a cesiated diamond film field emitter and field emitter formed therefrom

United States Patent

5,888,113
March 30, 1999
View the Complete Patent at the US Patent & Trademark Office
Fermi National Accelerator Laboratory - Visit the Office of Research and Technology Applications Website
A process for making a cesiated diamond film comprises (a) depositing a quantity of cesium iodide on the diamond film in a vacuum of between about 10.sup.-4 Torr and about 10.sup.-7 Torr, (b) increasing the vacuum to at least about 10.sup.-8 Torr, and (c) imposing an electron beam upon the diamond film, said electron beam having an energy sufficient to dissociate said cesium iodide and to incorporate cesium into interstices of the diamond film. The cesiated diamond film prepared according to the process has an operating voltage that is reduced by a factor of at least approximately 2.5 relative to conventional, non-cesiated diamond film field emitters.
Anderson; David F. (Batavia, IL), Kwan; Simon W. (Geneva, IL)
Universities Research Association, Inc. (Washington, DC)
08/ 829,492
March 27, 1997
This invention was made with Government support under Contract No. DE-AC02-76CH03000 awarded by the United States Department of Energy. The Government has certain rights in the invention.