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Gallium nitride junction field-effect transistor

United States Patent

5,866,925
February 2, 1999
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.
Zolper; John C. (Albuquerque, NM), Shul; Randy J. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
08/ 781,068
January 9, 1997
GOVERNMENT RIGHTS This invention was made with Government support under Contract No. DE-AC04-94AL85000 awarded by the U.S. Department of Energy. The Government has certain rights in the invention.