A projection lithography camera is presented with a wide ringfield optimized so as to make efficient use of extreme ultraviolet radiation from a large area radiation source (e.g., D.sub.source .apprxeq.0.5 mm). The camera comprises four aspheric mirrors optically arranged on a common axis of symmetry with an increased etendue for the camera system. The camera includes an aperture stop that is accessible through a plurality of partial aperture stops to synthesize the theoretical aperture stop. Radiation from a mask is focused to form a reduced image on a wafer, relative to the mask, by reflection from the four aspheric mirrors.
I. GOVERNMENT RIGHTS
This invention was made with United States Government support under Contract No. DE-AC04-94AL85000 awarded by the U.S. Department of Energy. The Government has certain rights in this invention.