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GaAs photoconductive semiconductor switch

United States Patent

5,804,815
September 8, 1998
View the Complete Patent at the US Patent & Trademark Office
A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.
Loubriel; Guillermo M. (Sandia Park, NM), Baca; Albert G. (Albuquerque, NM), Zutavern; Fred J. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
08/ 675,975
July 5, 1996
This invention was made with Government support under Contract DE-C04-4AL85000 awarded by the U. S. Department of Energy. The Government has certain rights in the invention.