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Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications

United States Patent

5,765,680
June 16, 1998
View the Complete Patent at the US Patent & Trademark Office
Argonne National Laboratory - Visit the Technology Development and Commercialization Website
An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.
Tam; Shiu-Wing (Downers Grove, IL)
The University of Chicago (Chicago, IL)
08/ 671,504
June 27, 1996
CONTRACTUAL ORIGIN OF THE INVENTION The United States Government has rights in this invention pursuant to Contract No. W-31-109-ENG-38 between the U.S. Department of Energy and The University of Chicago representing Argonne National Laboratory.