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Boron doping a semiconductor particle

United States Patent

5,763,320
June 9, 1998
View the Complete Patent at the US Patent & Trademark Office
A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.
Stevens; Gary Don (Dallas, TX), Reynolds; Jeffrey Scott (Murphy, TX), Brown; Louanne Kay (Garland, TX)
08/ 570,070
December 11, 1995
The Government of the United States of America has rights in this invention pursuant to Subcontract No. ZAI-4-11294-04 awarded by the U.S. Department of Energy.