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Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells

United States Patent

*** EXPIRED ***
March 24, 1998
View the Complete Patent at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.
Bhattacharya; Raghu N. (Littleton, CO), Contreras; Miguel A. (Golden, CO), Keane; James (Lakewood, CO), Tennant; Andrew L. (Denver, CO), Tuttle; John R. (Denver, CO), Ramanathan; Kannan (Lakewood, CO), Noufi; Rommel (Golden, CO)
Davis, Joseph & Negley (Austin, TX)
08/ 571,150
December 12, 1995
The government has rights in this invention pursuant to National Renewable Energy Laboratory (NREL) contract No. 1326.