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Semiconductor tunnel junction with enhancement layer

United States Patent

5,679,963
October 21, 1997
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling.
Klem; John F. (Sandia Park, NM), Zolper; John C. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
08/ 567,678
December 5, 1995
The United States Government has rights in this invention pursuant to Department of Energy Contract No. DE-AC04-94AL85000 with Sandia Corporation.