An X-ray source such as a synchrotron which provides a significant spectral content of hard X-rays is used to expose relatively thick photoresist such that the portions of the photoresist at an exit surface receive at least a threshold dose sufficient to render the photoresist susceptible to a developer, while the entrance surface of the photoresist receives an exposure which does not exceed a power limit at which destructive disruption of the photoresist would occur. The X-ray beam is spectrally shaped to substantially eliminate lower energy photons while allowing a substantial flux of higher energy photons to pass through to the photoresist target. Filters and the substrate of the X-ray mask may be used to spectrally shape the X-ray beam. Machining of photoresists such as polymethylmethacrylate to micron tolerances may be obtained to depths of several centimeters, and multiple targets may be exposed simultaneously. The photoresist target may be rotated and/or translated in the beam to form solids of rotation and other complex three-dimensional structures.
This invention was made in part with Government support under contract number DE-AC02-76CH00016, between the U.S. Department of Energy and Associated Universities, Inc. The Government has certain rights in the invention.