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Photodetectors using III-V nitrides

United States Patent

5,677,538
October 14, 1997
View the Complete Patent at the US Patent & Trademark Office
A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.
Moustakas; Theodore D. (Dover, MA), Misra; Mira (Arlington, MA)
Trustees of Boston University (Boston, MA)
08/ 499,710
July 7, 1995
Portions of this invention were made with United States Government support under Grant No. DE-FG02-94ER81843 awarded by the Department of Energy, and the Government may have certain rights in the invention.