Methods are provided for the production of supported monophasic group I-III-VI semiconductor films. In the subject methods, a substrate is coated with group I and III elements and then contacted with a reactive group VI element containing atmosphere under conditions sufficient to produce a substrate coated with a composite of at least two different group I-III-IV alloys. The resultant composite coated substrate is then annealed in an inert atmosphere under conditions sufficient to convert the composite coating to a monophasic group I-III-VI semiconductor film. The resultant supported semiconductor films find use in photovoltaic applications, particularly as absorber layers in solar cells.
ACKNOWLEDGMENT OF GOVERNMENT RIGHTS
This invention was made with Government support under subcontract no. XAV-3-13170-01 awarded by the National Renewable Energy Laboratory under contract no. DE-AC36-83CH10093 awarded by the Department of Energy. The Government has certain rights in this invention.