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Process for preparing silicon carbide foam

United States Patent

*** EXPIRED ***
September 16, 1997
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A method of preparing near net shape, monolithic, porous SiC foams is disclosed. Organosilicon precursors are used to produce polymeric gels by thermally induced phase separation, wherein, a sufficiently concentrated solution of an organosilicon polymer is cooled below its solidification temperature to form a gel. Following solvent removal from the gel, the polymer foam is pretreated in an oxygen plasma in order to raise its glass transition temperature. The pretreated foam is then pyrolized in an inert atmosphere to form a SiC foam.
Whinnery; LeRoy Louis (Livermore, CA), Nichols; Monte Carl (Livermore, CA), Wheeler; David Roger (Albuquerque, NM), Loy; Douglas Anson (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
08/ 586,453
January 16, 1996
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under contract no. DE-AC04-94AL8500 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.