Skip to Content
Find More Like This
Return to Search

Method for deposition of a conductor in integrated circuits

United States Patent

5,663,098
September 2, 1997
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten.
Creighton; J. Randall (Albuquerque, NM), Dominguez; Frank (Albuquerque, NM), Johnson; A. Wayne (Albuquerque, NM), Omstead; Thomas R. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
08/ 258,911
June 13, 1994
The United States Government has rights in this invention pursuant to Contract No. DE-AC04-76DP00789 between the Department of Energy and American Telephone and Telegraph Company.