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Method of making an InAsSb/InAsSbP diode lasers

United States Patent

5,658,825
August 19, 1997
View the Complete Patent at the US Patent & Trademark Office
InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 .mu.m to 5 .mu.m is possible by varying the ratio of As:Sb in the active layer.
Razeghi; Manijeh (Wilmette, IL)
Northwestern University (Evanston, IL)
08/ 717,125
September 20, 1996
This research was supported by the Division of Chemical Sciences, Office of the Basic Energy Sciences, U.S. Department of Energy (Grant DAAH04-95-1-0343).