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Dry etching method for compound semiconductors

United States Patent

*** EXPIRED ***
April 29, 1997
View the Complete Patent at the US Patent & Trademark Office
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A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.
Shul; Randy J. (Albuquerque, NM), Constantine; Christopher (Safety Harbor, FL)
Sandia Corporation (Albuquerque, NM)
08/ 437,532
May 10, 1995
This invention was made with Government support under Contract No. DE-AC04-94AL85000 awarded by the U.S. Department of Energy. The Government has certain rights in the invention.